This paper investigates the characteristics of two recently introduced 6-T asymmetric source and drain FinFET SRAM cell for different channel orientations. Moreover, configurations for 4-T asymmetric SRAM cells are proposed. We compare the characteristics of the 4-T and 6-T SRAM cells. The results indicate that asymmetric structures have higher read stability than symmetric ones for 6-T, 4-TDL, and 4-TLL with different channel orientations. (100) channel orientation presents more read stability for 4-TLL while (110) is the preferable channel orientation for 6-T and 4-TDL from the read stability perspective. Asymmetric structures, however, have less read current and ADSE structure has the least one. From the write operation perspective, asymmetric structures present better stability and writability of 4-T cells is more than that of 6-T cell. Moreover, among the structures, ADD FinFET structures have the lowest static power due to the good DIBL control.